When two conducting materials with different work functions are brought together, for example via an external wire contact, electrons in the material with the lower work function flow to the one with the higher work function. If these materials are made into a parallel plate capacitor, equal and opposite surface charges form. Measuring the contact potential is then exquisitely simple: an external potential is applied to the capacitor until the surface charges disappear, and at this point the external potential equals the contact potential. Kelvin realized this experimentally measured using two large flat polished disc's of Zinc ...
<< MORE >>Authors: I.D.
Baikie, U. Petermann, B. Lägel
Abstract: Using a novel ultra high vacuum compatible Kelvin probe a study is made of the work function (
f) changes on semiconductors and metals occurring during basic surface processing, for example, surface cleaning, sputtering, oxidation and thin film growth. It shows that damage of the
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In static SIMS, dedicated to the analysis of the top monolayer, the primary ion dose is kept below 112 ions/cm2 and the mass spectrum reveals MOLECULAR information. In dynamic SIMS mode, the primary ion dose is not limited and exceeds 112 ions/cm2. In this mode, ELEMENTAL and ISOTOPIC information can be obtained from the mass spectrum. It allows surface, "bulk" and 2D/3D analysis.
The ionization yield of most elements varies by decades, depending on the chemical ...<< MORE >>
The InGaN based multiple quantum well (MQW) structure in a commercially available white light emitting diode (LED) was studied by transmission electron microscopy (TEM) and three-dimensional atom probe tomography (APT). The average In mole fraction by three-dimensional (3D) APT was found to be about 18% in the InGaN well which is consistent with the secondary ion mass spectrometry (SIMS) analysis.
The In distribution in the InGaN well layer was analyzed by the iso curve mapping of 3D APT and found to be nonuniform in the InGaN active layer. In clustering or In rich regions in the range of ...<< MORE >>